Chlorine doping of MoSe₂ flakes by ion implantation

The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering techniques effective tuning their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation most developed method offering stable and tunable doping. In this work, we demonstrate n-type in MoSe2 flakes realized by low-energy Cl+ ions followed millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature about 1000 {\deg}C enough to recrystallize implanted MoSe2. Cl distribution few-layer-thick measured secondary mass spectrometry. An increase electron concentration increasing fluence determined from softening red shift Raman-active A_1g phonon mode due Fano effect. electrical measurements confirm Cl-implanted A comparison results our density functional theory calculations experimental temperature-dependent micro-Raman spectroscopy data indicates atoms are incorporated atomic network as substitutional donor impurities.